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Silicon-Power Releases 2GB DDR3 1066/ 1333 Unbuffered DIMM
Friday, 30 May 2008

DDr3 2GB

Silicon-Power releases its latest DDR3 memory modules – 2GB DDR3 1066/ 1333 Unbuffered DIMM. DDR3 has higher speed and bandwidth than DDR2 memory modules and reduces power consumption by 30% compared to the DDR2. Furthermore, its ASR (Automatic Self-Refresh) design can decrease the refreshing frequency of memory modules, thus successfully reduce the temperature and power consumption. Due to more and new platforms of standard memory are getting ready, Silicon-Power’s 2GB DDR3 1066/ 1333 Unbuffered DIMM are the best choices of memory module for high-performance system.

Silicon-Power’s 2GB DDR3 1066/ 1333 Unbuffered DIMM are manufactured by selected chips which passed by strict quality testing. It complies with JEDEC(the Joint Electron Device Engineering Counci)standard, operates at CL7/ CL9 timings at its default 1.5 voltages and equips with high compatibility and stability. Silicon-Power’s 2GB DDR3 1066/ 1333 Unbuffered DIMM provide better system stability and reliability, and they offer life time warranty of the most trustworthy choice for alconsumers.

DDR3 1066 Unbuffered DIMM 2GB

Feature

  1. Lower power consumption
  2. High compatibility and reliability with Montevina platform
  3. High performance
  4. High Bandwidth – 8.5GB/sec
  5. Up to 1Gb component available, max. 2GB
  6. JEDEC standard design
  7. RoHS approved
  8. Lifetime warranty

Specification

  1. Capacity: 2GB
  2. Number of Pin: 240 pin
  3. Speed (Mbps): 1066
  4. PCB Layer: 6 layer
  5. VDD / VDDQ: 1.5V ± 0.075 V
  6. Module Bandwidth: 8.5GB/sec
  7. C: 7

DDR3 1333 Unbeffered DIMM 2GB

Feature

  1. Lower power consumption
  2. High compatibility and reliability with Montevina platform
  3. High performance
  4. High Bandwidth – 10.7GB/sec
  5. Up to 1Gb component available, max. 2GB
  6. JEDEC standard design
  7. RoHS approved
  8. Lifetime warranty

Specification

  • Capacity: 2GB
  • Number of Pin: 240 pin
  • Speed (Mbps): 1333
  • PCB Layer: 6 layer
  • VDD / VDDQ: 1.5V ± 0.075 V
  • Module Bandwidth: 10.7GB/sec
  • C: 9




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